BS170 datasheet(3/8 Pages) PHILIPS

3 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel vertical D-MOS transistor

BS170

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Drain-source voltage

VDS

max.

60 V

Drain-gate voltage

VDG

max.

60 V

Gate-source voltage

VGS

max.

15 V

Drain current (DC) at Tc = 25 °CID

max.

500 mA

Total power dissipation up to Tamb = 25 °CPtot

max.

830 mW

Storage temperature range

Tstg

−55 to +150 °C

Junction temperature

max.

150

°C

From junction to ambient

Rth j-a

150 K/W

Drain-source breakdown voltage

min.

typ.

VGS = 0; ID = 100 µAV(BR)DS

Gate threshold voltage

min.

max.

0.8

3.0

VGS = VDS;ID = 1 mA

VGS(th)

Gate-source leakage current

VGS = 15 V; VDS =0

IGSoff

max.

10 nA

Drain cut-off current

VDS = 25 V; VGS =0

IDSS

max.

0.5

µA

Drain-source ON-resistance (note 1)

typ.

max.

2.5

5.0

Ω

VGS = 10 V; ID = 200 mA

RDS(on)

Forward transconductance (note 1)

VDS = 10 V; ID = 200 mA; f = 1 kHz

gfs

typ.

200 mS

Capacitances at f = 1 MHz

typ.

max.

VDS = 10 V; VGS =0

Ciss

Cos

typ.

max.

Crs

typ.

max.

Switching times at ID = 200 mA

typ.

max.

ID = 200 mA; VDS = 50 V;

ton

VGS = 0 to 10 V

toff

typ.

max.

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