1997 Nov 26

2

Philips Semiconductors

Objective specification

N-channel enhancement mode

MOS transistor

BSH104

FEATURES

• High-speed switching

• No secondary breakdown

• Direct interface to C-MOS, TTL, etc.

• Very low threshold.

APPLICATIONS

• ‘Glue-logic’: interface between logic blocks and/or

periphery

• Power management

• DC to DC converters

• General purpose switch

• Battery powered applications.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23

SMD package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

s

source

3

d

drain

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

s

d

g

MAM273

2

1

3

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

12

V

source-drain diode forward voltage

−

1V

gate-source voltage (DC)

−±8V

gate-source threshold voltage

0.4

−

V

drain current (DC)

−

1.1

A

drain-source on-state resistance

−

0.3

Ω

total power dissipation

−

0.5

W