BSH104 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA12

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = 1 mA

0.4

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 9.6 V

−−

100

IGSS

gate leakage current

VDS = 0; VGS = ±8V

−−±100 nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID = 0.65 A

−−

0.23

Ω

VGS = 2.5 V; ID = 0.65 A

−−

0.3

Ω

VGS = 1.8 V; ID = 0.32 A

−−

0.4

Ω

Ciss

input capacitance

VGS = 0; VDS = 9.6 V; f = 1 MHz

−

t.b.f.

−

Coss

output capacitance

VGS = 0; VDS = 9.6 V; f = 1 MHz

−

t.b.f.

−

Crss

reverse transfer capacitance

VGS = 0; VDS = 9.6 V; f = 1 MHz

−

t.b.f.

−

total gate charge

VGS =6V; VDD =6V; ID = 0.65 A;

Tamb =25 °C

−

t.b.f.

−

QGS

gate-source charge

VDD =6V; ID = 0.65 A;

Tamb =25 °C

−

t.b.f.

−

QGD

gate-drain charge

VDD =6V; ID = 0.65 A;

Tamb =25 °C

−

t.b.f.

−

Switching times

td(on)

turn-on delay time

VGS = 0 to 6 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

fall time

VGS = 0 to 6 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

ton

turn-on switching time

VGS = 0 to 6 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

td(off)

turn-off delay time

VGS = 6 to 0 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

rise time

VGS = 6 to 0 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

toff

turn-off switching time

VGS = 6 to 0 V; VDD =6V;

ID = 0.65 A; Rgen =6 Ω

−

t.b.f.

−

Source-drain diode

VSD

source-drain diode forward voltage

VGD = 0; IS = 0.5 A

−−

trr

reverse recovery time

IS = 0.5 A; di/dt = −100 A/µs

−

t.b.f.

−

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