BSH201 datasheet(2/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

P-channel enhancement mode

BSH201

MOS transistor

ELECTRICAL CHARACTERISTICS

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = -10 µA

-60

voltage

GS(TO)

Gate threshold voltage

DS = VGS; ID = -1 mA

-1

-1.9

j = 150˚C

-0.4

DS(ON)

Drain-source on-state

GS = -10 V; ID = -160 mA

2.1

2.5

Ω

resistance

GS = -4.5 V; ID = -80 mA

2.7

3.75

Ω

GS = -10 V; ID = -160 mA; Tj = 150˚C

3.6

4.25

Ω

Forward transconductance

DS = -48 V; ID = -160 mA

0.1

0.35

GSS

Gate source leakage current V

GS = ±20 V; VDS = 0 V

±10 ±100

DSS

Zero gate voltage drain

DS = -48 V; VGS = 0 V;

-50

-100

current

j = 150˚C

-1.3

-10

µA

g(tot)

Total gate charge

D = -0.5 A; VDD = -10 V; VGS = -10 V

Gate-source charge

0.5

Gate-drain (Miller) charge

0.4

d on

Turn-on delay time

DD = -10 V; ID = -0.5 A;

Turn-on rise time

GS = -10 V; RG = 6 Ω

4.5

d off

Turn-off delay time

Resistive load

Turn-off fall time

iss

Input capacitance

GS = 0 V; VDS = -48 V; f = 1 MHz

oss

Output capacitance

rss

Feedback capacitance

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Continuous reverse drain

a = 25 ˚C

-0.3

current

DRM

Pulsed reverse drain current

-1.2

Diode forward voltage

F = -0.38 A; VGS = 0 V

-0.97

-1.3

Reverse recovery time

F = -0.25 A; -dIF/dt = 100 A/µs;

Reverse recovery charge

GS = 0 V; VR = -48 V

August 1998

Rev 1.000

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