Philips Semiconductors

Product specification

P-channel enhancement mode

BSH207

MOS transistor

Fig.13. Typical turn-on gate-charge characteristics.

V

Fig.14. Typical reverse diode current.

I

BSH207

-5

-4

-3

-2

-1

0

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Gate charge, (nC)

Gate-source voltage, VGS (V)

VDD = 10 V

RD = 10 Ohms

Tj = 25 C

BSH207

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

0.2

0.4

0.6

0.8

1

1.2

1.4

Drain-Source Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

150 C

August 1998

5

Rev 1.000