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BSP090 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BSP090 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  1997 Mar 13 5 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP090 CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −30 −− V VGSth gate-source threshold voltage VGS =VDS; ID = −1mA −1 −−2.8 V IDSS drain-source leakage current VGS = 0; VDS = −24 V −− −500 nA IGSS gate leakage current VGS = ±20 V; VDS =0 −− ±100 nA RDSon drain-source on-state resistance VGS = −4.5 V; ID = −1.4 A −− 0.15 Ω VGS = −10 V; ID = −2.8 A −− 0.09 Ω Ciss input capacitance VGS = 0; VDS = −24 V; f = 1 MHz − 800 − pF Coss output capacitance VGS = 0; VDS = −24 V; f = 1 MHz − 400 − pF Crss reverse transfer capacitance VGS = 0; VDS = −24 V; f = 1 MHz − 100 − pF Qg total gate charge VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb =25 °C − 21 − nC Qgs gate-source charge VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb =25 °C − 2.5 − nC Qgd gate-drain charge VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb =25 °C − 6 − nC td(on) turn-on delay time VGS =0to −10 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 6 − ns tr rise time VGS =0to −10 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 6 − ns ton turn-on switching time VGS =0to −10 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 12 25 ns td(off) turn-off delay time VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 55 − ns tf fall time VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 40 − ns toff turn-off switching time VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL =15 Ω; Rgen =6 Ω − 95 190 ns Source-drain diode VSD source-drain diode forward voltage VGD = 0; IS = −1.25 A −− −1.3 V trr reverse recovery time IS = −1.25 A; di/dt = 100 A/µs − 70 − ns |
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