BSP107 datasheet(4/12 Pages) PHILIPS

4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP107

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS =0

ID =10 µA

200

−−

IDSS

drain-source leakage current

VDS = 130 V

VGS =0

−−

IDSX

drain-source leakage current

VDS =70V

VGS = 0.2 V

−−

µA

±I

GSS

gate-source leakage current

± VGS =15V

VDS =0

−−

VGS(th)

gate threshold voltage

ID =1 mA

VDS =VGS

0.8

−

2.4

RDS(on)

drain-source on-resistance

ID =20mA

VGS = 2.6 V

−

Ω

RDS(on)

drain-source on-resistance

ID = 150 mA

VGS =10V

−

−Ω

| Yfs|

transfer admittance

ID = 250 mA

VDS = 15 V

180

−

Ciss

input capacitance

VDS =10V

VGS =0

f = 1 MHz

−

Coss

output capacitance

VDS =10V

VGS =0

f = 1 MHz

−

Crss

feedback capacitance

VDS =10V

VGS =0

f = 1 MHz

−

410

Switching times (see Figs 2 and 3)

ton

switching-on time

ID = 250 mA

VDD =50V

VGS =0 − 10 V

−

210

toff

switching-off time

ID = 250 mA

VDD =50V

VGS =0 − 10 V

−

520

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