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BSP152 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BSP152 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 Fig.10 Drain-source on-resistance as a function of gate-source voltage, typical values. VDS = 100 mV; Tj = 25 °C. handbook, halfpage 1 10 100 02 46 8 10 RDS(on) ( Ω) MRC210 VDS (V) Fig.11 SOAR curve. δ = 0.01; Tamb = 25 °C. (1) RDSon limitation. handbook, halfpage 1 110 5 tp MRC212 (1) DC t p T P t t p T δ = 10-1 10-2 10-3 102 10 µs 100 µs 1 ms 10 ms 100 ms 1 s 103 VDS (V) ID (mA) Fig.12 Transient thermal resistance from junction to ambient as a function of pulse time. handbook, full pagewidth 1 10 10 tp (s) 1 MRC211 δ = 0.75 0.5 0.1 0 0.05 0.01 0.02 0.2 t p T P t t p T δ = Rth j-a (K/W) 10-5 10-4 10-3 10-2 10-1 102 103 10-1 102 |
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