BFG25AX datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Oct 29

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFG25A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

6.5

Ptot

total power dissipation

Ts ≤ 165 °C; note 1

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point note 1

320

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector leakage current

IE = 0; VCB =5V

−−

µA

hFE

DC current gain

IC = 0.5 mA; VCE = 1 V

5080200

Cre

feedback capacitance

IC =ic = 0; VCB = 1 V; f = 1 MHz

−

0.21

0.3

transition frequency

IC = 1 mA; VCE =1V;

Tamb =25 °C; f = 500 MHz

3.5

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 0.5 mA; VCE =1V;

f = 1 GHz; Tamb =25 °C

−

noise ﬁgure

IC = 0.5 mA; VCE = 1 V; f = 1 GHz;

Γ = Γopt; Tamb =25 °C

−

1.8

−

IC = 1 mA; VCE = 1 V; f = 1 GHz;

Γ = Γopt; Tamb =25 °C

−

10 log

–





–





-------------------------------------------------------------- dB

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