BSP250 datasheet(5/12 Pages) PHILIPS

Part #	BSP250

Description	P-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP250

Fig.4

Capacitance as a function of drain source

voltage; typical values.

VGS =0.

Tj =25 °C.

handbook, halfpage

600

400

200

−10

−20

−30

MBE144

(pF)

VDS (V)

Ciss

Coss

Crss

Fig.5 Output characteristics; typical values.

Tj =25 °C.

handbook, halfpage

−2

−10

−12

−10

−12

−8

−6

−2

−4

MBE149

−4

−6

−8

(V)

(A)

VGS =

−10 V

−6 V

−5 V

−4.5 V

−4 V

−3.5 V

−3 V

−2.5 V

−7.5 V

Fig.6 Transfer characteristic, typical values.

VDS = −10 V.

Tj =25 °C.

handbook, halfpage

−2

−4

−8

−16

−12

−4

−8

MBE150

−6

(A)

VGS (V)

Fig.7

Gate-source voltage as a function of total

gate charge.

VDD = −15 V.

ID = −3A.

handbook, halfpage

−2

−4

−10

−8

−10

−8

MBE145

−6

−4

−2

Qg (nC)

VGS

(V)

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