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BSP304 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BSP304
Description  P-channel enhancement mode vertical D-MOS transistors
PDF  9 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP304 Datasheet(HTML) 5 Page - NXP Semiconductors

  BSP304 Datasheet HTML 1Page - NXP Semiconductors BSP304 Datasheet HTML 2Page - NXP Semiconductors BSP304 Datasheet HTML 3Page - NXP Semiconductors BSP304 Datasheet HTML 4Page - NXP Semiconductors BSP304 Datasheet HTML 5Page - NXP Semiconductors BSP304 Datasheet HTML 6Page - NXP Semiconductors BSP304 Datasheet HTML 7Page - NXP Semiconductors BSP304 Datasheet HTML 8Page - NXP Semiconductors BSP304 Datasheet HTML 9Page - NXP Semiconductors  
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1995 Apr 07
5
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
Fig.6
Capacitance as a function of drain source
voltage; typical values.
VGS =0.
Tj =25 °C.
f = 1 MHz.
handbook, halfpage
0
100
60
80
40
20
0
10
20
30
MLC688
C
(pF)
V
(V)
DS
Coss
Crss
C iss
Fig.7 Typical output characteristics.
Tj =25 °C.
handbook, halfpage
02
4
10
800
600
200
0
400
MLD139
6
I D
(mA)
V
(V)
DS
12
8
P = 1 W
V
= 10 V
GS
7 V
6 V
5 V
4 V
3.5 V
3 V
Fig.8 Typical transfer characteristics.
VDS = −25 V.
Tj =25 °C.
handbook, halfpage
02
4
10
800
600
200
0
400
MLC689
6
I D
(mA)
V
(V)
GS
8
Fig.9
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
ID = −170 mA.
Tj =25 °C.
handbook, halfpage
0
20
40
60
80
0246
8
10
R DSon
(
Ω)
V
(V)
GS
MLC691



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