BSP304 datasheet(3/9 Pages) PHILIPS

3 / 9 page

1995 Apr 07

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistors

BSP304; BSP304A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−300

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−−170

IDM

peak drain current

−−0.75

Ptot

total power dissipation

up to Tamb =25 °C; note 1

−

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−300

−−

VGSth

gate-source threshold voltage

VDS =VGS; ID = −1mA

−1.7

−−2.55 V

IDSS

drain-source leakage current

VGS = 0; VDS = −240 V

−−−100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100

RDSon

drain-source on-state resistance

VGS = −10 V; ID = −170 mA

−−

Ω

yfs

forward transfer admittance

VDS = −25 V; ID = −170 mA

100

−−

Ciss

input capacitance

VGS = 0; VDS = −25 V; f = 1 MHz −

Coss

output capacitance

VGS = 0; VDS = −25 V; f = 1 MHz −

Crss

reverse transfer capacitance

VGS = 0; VDS = −20 V; f = 1 MHz −

515

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS =0to −10 V; VDD = −50 V;

ID = −250 mA

−

510

toff

turn-off time

VGS = −10 to 0 V; VDD = −50 V;

ID = −250 mA

−

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