FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKD3014

N-Ch 30V Fast Switching MOSFETs

11

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

1

43

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

1

30

A

ID@TA=25℃

Continuous Drain Current, VGS @ 10V

1

11

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V

1

9

A

IDM

Pulsed Drain Current

2

112

A

EAS

Single Pulse Avalanche Energy

3

24.2

mJ

IAS

Avalanche Current

22

A

PD@TC=25℃

Total Power Dissipation

4

37.5

W

PD@TA=25℃

Total Power Dissipation

4

2.42

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

62

℃/W

RθJC

Thermal Resistance Junction-Case

1

---

4

℃/W

BVDSS

RDSON

ID

30V

12

mΩ

43A

The FKD3014 is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most of the synchronous buck

converter applications.

The FKD3014 meet the RoHS and Green Product

requirement, 100% EAS guaranteed with full

function reliability approved.

 Super Low Gate Charge

 100% EAS Guaranteed

 Green Device Available

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Description

Absolute Maximum Ratings

Thermal Data

TO252 Pin Configuration

Product Summary