2004 Nov 11

2

Philips Semiconductors

Product specification

NPN Darlington transistor

BSR52

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial high gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic

package. PNP complement: BSR62.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

Fig.1

Simplified outline (TO-92; SOT54) and

symbol.

handbook, halfpage

MAM307

1

2

3

1

2

3

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BSR52

SC-43A

plastic single-ended leaded (through hole) package; 3 leads

SOT54

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

90

V

collector-emitter voltage

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

base current (DC)

−

100

mA

total power dissipation

−

830

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C