1997 May 14

2

Philips Semiconductors

Product specification

PNP Darlington transistors

BSS61; BSS62

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial high gain amplification.

DESCRIPTION

PNP Darlington transistor in a TO-39 metal package.

NPN complements: BSS51 and BSS52.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage

MAM310

2

3

1

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-base voltage

open emitter

BSS61

−−−80

V

BSS62

−−−90

V

collector-emitter voltage

BSS61

−−−60

V

BSS62

−−−80

V

collector current (DC)

−−−1A

total power dissipation

−−

0.8

W

−−

5W

DC current gain

2000

−−

transition frequency

−

200

−

MHz