BSS62 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 14

Philips Semiconductors

Product speciﬁcation

PNP Darlington transistors

BSS61; BSS62

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

ICES

collector cut-off current

BSS61

VBE = 0; VCE = −60 V

−−−50

BSS62

VBE = 0; VCE = −80 V

−−−50

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−100 nA

hFE

DC current gain

IC = −150 mA; VCE = −10 V

1000

−−

IC = −500 mA; VCE = −10 V

2000

−−

VCEsat

collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA

−−−1.3

IC = −500 mA; IB = −0.5 mA; Tj = 200 °C −−−1.3

VCEsat

collector-emitter saturation voltage

BSS61

IC = −1 A; IB = −1mA

−−−1.6

IC = −1 A; IB = −1 mA; Tj = 200 °C

−−−1.6

VCEsat

collector-emitter saturation voltage

BSS62

IC = −1 A; IB = −4mA

−−−1.6

IC = −1 A; IB = −4 mA; Tj = 200 °C

−−−1.6

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −0.5 mA

−−−1.9

VBEsat

base-emitter saturation voltage

BSS61

IC = −1 A; IB = −1mA

−−−2.2

BSS62

IC = −1 A; IB = −4mA

−−−2.2

transition frequency

IC = −500 mA; VCE = −5 V; f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−

0.5

−µs

ICon = −1 A; IBon = −1 mA; IBoff =1mA

−

0.4

−µs

toff

turn-off time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−

0.7

−µs

ICon = −1 A; IBon = −1 mA; IBoff =1mA

−

1.5

−µs

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