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BSS89 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSS89 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1998 Apr 24 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS89 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. PINNING - TO-92 variant PIN SYMBOL DESCRIPTION 1 g gate 2 d drain 3 s source Fig.1 Simplified outline and symbol. handbook, halfpage 1 3 2 MAM146 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage (DC) −− 200 V VGSO gate-source voltage (DC) open drain −−±20 V ID drain current (DC) −− 300 mA Ptot total power dissipation Tamb ≤ 25 °C −− 1W RDSon drain-source on-state resistance ID = 400 mA; VGS =10V − 4.5 6 Ω yfs forward transfer admittance ID = 400 mA; VDS = 25 V 140 350 − mS |
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