BSS89 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1998 Apr 24

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BSS89

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead

minimum 10

× 10 mm.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

200

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−

300

IDM

peak drain current

−

1.2

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

Tstg

storage temperature

−55

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage VGS = 0; ID = 250 µA

200

−−

VGSth

gate-source threshold voltage

VDS =VGS; ID = 1 mA

0.8

−

2.8

IDSS

drain-source leakage current

VDS = 60 V; VGS =0

−−

200

VDS = 200 V; VGS =0

−

0.1

µA

IGSS

gate leakage current

VDS = 0; VGS = ±20 V

−−±100

RDSon

drain-source on-state resistance VGS =10V; ID = 400 mA

−

4.5

Ω

y

fs

forward transfer admittance

ID = 400 mA; VDS = 25 V

140

350

−

Ciss

input capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

Coss

output capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

Crss

reverse transfer capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

3.5

−

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS =0to10V; VDD =50V;

ID = 250 mA

−

toff

turn-off time

VGS =10to0V; VDD =50V;

ID = 250 mA

−

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