BST74A datasheet(4/12 Pages) PHILIPS

4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel vertical D-MOS transistor

BST74A

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Drain-source breakdown voltage

ID =10 µA; VGS =0

V(BR)DS

min.

200 V

Drain-source leakage current

VDS = 160 V; VGS =0

IDSS

max.

µA

Gate-source leakage current

VGS = 20 V; VDS =0

IGSS

max.

100 nA

Gate threshold voltage

min.

max.

0.8

2.8

ID = 1 mA; VDS = VGS

VGS(th)

Drain-source ON-resistance (see Fig.4)

typ.

max.

Ω

ID = 250 mA; VGS = 10 V

RDS(on)

Transfer admittance

ID = 250 mA; VDS = 15 V

 Yfs 

typ.

250 mS

Input capacitance at f = 1 MHz

typ.

max.

VDS = 10 V; VGS =0

Ciss

Output capacitance at f = 1 MHz

typ.

max.

VDS = 10 V; VGS =0

Coss

Feedback capacitance at f = 1 MHz

typ.

max.

VDS = 10 V; VGS =0

Crss

Switching times (see Figs 2 and 3)

ID = 250 mA; VDS = 50 V; VGS = 0 to 10 V

ton

typ.

4 ns

max.

10 ns

toff

typ.

15 ns

max.

25 ns

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