BST80 datasheet(5/12 Pages) PHILIPS

Part #	BST80

Description	N-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BST80

Fig.6 Output characteristics; typical values.

Tj =25 °C.

(1) VGS =10V.

(2) VGS =6V.

(3) VGS =5V.

(4) VGS =4V.

(5) VGS =3V.

handbook, halfpage

(2)

(3)

(4)

(5)

1.2

0.8

0.4

VDS (V)

(A)

210

MDA173

(1)

Fig.7 Transfer characteristic; typical values.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

1.2

0.8

0.4

VGS (V)

(A)

210

MDA172

Fig.8 Drain current as a function of drain-source

on-state resistance; typical values.

Tj =25 °C.

(1) VGS =10V.

(2) VGS =6V.

(3) VGS =5V.

(4) VGS =4V.

handbook, halfpage

(mA)

RDSon (Ω)

2468

103

102

MDA171

(1)

(2)

(3)

(4)

Fig.9

Temperature coefficient of gate-source

threshold voltage; typical values.

VGSth at 1 mA.

GSth at Tj

GSth at 25 ° C

--------------------------------------

handbook, halfpage

−50

150

1.2

0.7

1.1

100

0.9

0.8

MDA175

Tj (

oC)

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