BST80 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BST80

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Device mounted on a ceramic substrate; area 2.5 cm2; thickness 0.7 mm.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−

500

IDM

peak drain current

−

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA80

−−

VGSth

gate-source threshold voltage

VDS =VGS; ID = 1 mA

1.5

−

3.5

IDSS

drain-source leakage current

VDS = 60 V; VGS =0

−−

µA

IGSS

gate leakage current

VDS = 0; VGS = ±20 V

−−±100 nA

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 500 mA

−

Ω

yfs

forward transfer admittance

ID = 500 mA; VDS =15V

−

300

−

Ciss

input capacitance

VDS = 10 V; VGS = 0; f = 1 MHz

−

Coss

output capacitance

VDS = 10 V; VGS = 0; f = 1 MHz

−

Crss

reverse transfer capacitance

VDS = 10 V; VGS = 0; f = 1 MHz

−

812

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS = 0 to 10 V; VDD =50V;

ID = 500 mA

−−

toff

turn-off time

VGS =10to0V; VDD =50V;

ID = 500 mA

−−

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