INA780B datasheet(7/42 Pages) TI1

7 / 42 page

at TA = 25 °C, VS = 3.3 V, ISENSE = 0 A, VCM = VIN– = VBUS= 48 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INTEGRATED SHUNT

Internal kelvin Resistance

TA = 25°C

350

400

500

µΩ

Pin to pin package resistance

IS+ to IS–, TA = 25°C

450

560

650

µΩ

Maximum continuous current

–40°C ≤ TA ≤ 125°C

±50

Short time overload change

ISENSE = 100 A for 5 seconds

±0.05

Change due to temperature cycling –65°C ≤ TA ≤ 150°C, 500 cycles

±0.1

Resistance change to solder heat

260°C solder, 10 s

±0.1

High temperature exposure change 1000 hours, TA = 165°C

±0.15

Cold temperature storage change

24 hours, TA = –65°C

±0.025

POWER SUPPLY

Supply voltage

2.7

5.5

VPOR

POR Voltage Level

Supply rising

1.28

Quiescent current

VSENSE = 0 V

640

750

µA

VSENSE = 0 V, TA = –40°C to +125°C

IQSD

Quiescent current, shutdown

Shutdown mode

2.8

µA

TPOR

Device start-up time

Power-up (NPOR)

300

µs

From shutdown mode

DIGITAL INPUT / OUTPUT

VIH

Logic input level, high

SDA, SCL

1.2

5.5

VIL

Logic input level, low

GND

0.4

VOL

Logic output level, low

IOL = 3 mA

GND

0.4

IIO_LEAK Digital leakage input current

0 ≤ VIN ≤ VS

–1

µA

(1)

Subject to oscillator accuracy and drift

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INA780A, INA780B

SBOSAB6 – JULY 2023

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