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FQP20N06 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # FQP20N06
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FQP20N06 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  FQP20N06 Datasheet HTML 1Page - Inchange Semiconductor Company Limited FQP20N06 Datasheet HTML 2Page - Inchange Semiconductor Company Limited FQP20N06 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
FQP20N06
·
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 250uA
60
-
-
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 250uA
2.0
-
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 10V; ID= 10A
-
-
60
mΩ
IGSS
Gate Source Leakage Current
VGS= ±25V; VDS= 0
-
-
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
-
-
1
uA
VSD
Diode Forward Voltage
IS= 20A; VGS= 0
-
-
1.5
V
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
F = 1.0 MHz
-
450
-
pF
Coss
Output Capacitance
-
170
-
Crss
Reverse Transfer Capacitance
-
25
-
Switching Characteristics
Qg
Total Gate Charge
VDD = 48V,
ID = 20A,
VGS = 10V
-
11.5
-
nC
Qgs
Gate-Source Charge
-
3
-
Qgd
Gate-Drain Charge
-
4.5
-
td(on)
Turn-on Delay Time
VDD = 30V,
ID = 10A,
RG = 25Ω
-
5
-
ns
tr
Turn-on Rise Time
-
45
-
td(off)
Turn-off Delay Time
-
20
-
tf
Turn-off Fall Time
-
25
-



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