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FQP20N06 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FQP20N06 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FQP20N06 DESCRIPTION · Drain Current ID=20A@ TC=25℃ · Drain Source Voltage- : VDSS=60V(Min) · Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) · 100% Avalanche Tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High current , high speed switching · Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 25 V ID Drain Current-continuous@ TC=25℃ 20 A IDM Pulse Drain Current 80 A PD Power Dissipation @TC=25℃ 53 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to case 2.85 ℃ /W |
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