BSW68 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 05

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BSW66A; BSW67A; BSW68A

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BSW66A

IE = 0; VCB =50V

−−

100

IE = 0; VCB = 50 V; Tj = 150 °C

−−

µA

IE = 0; VCB = 100 V

−−

100

µA

ICBO

collector cut-off current

BSW67A

IE = 0; VCB =60V

−−

100

IE = 0; VCB = 60 V; Tj = 150 °C

−−

µA

IE = 0; VCB = 120 V

−−

100

µA

ICBO

collector cut-off current

BSW68A

IE = 0; VCB =75V

−−

100

IE = 0; VCB = 75 V; Tj = 150 °C

−−

µA

IE = 0; VCB = 150 V

−−

100

µA

IEBO

emitter cut-off current

IC = 0; VEB =3V

−−

100

IC = 0; VEB =6V

−−

100

µA

hFE

DC current gain

VCE =5V

IC =10mA

−−

IC = 100 mA

−−

IC = 500 mA

−−

IC =1A

−−

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB =10mA

−−

150

IC = 500 mA; IB =50mA

−−

400

IC = 1 A; IB = 150 mA

−−

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB =10mA

−−

900

IC = 500 mA; IB =50mA

−−

1.1

IC = 1 A; IB = 150 mA

−−

1.4

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−−

emitter capacitance

IC =ic = 0; VEB = 0; f = 1 MHz

−−

300

transition frequency

IC = 100 mA; VCE = 20 V; f = 100 MHz −

130

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 500 mA; IBon = 50 mA;

IBoff = −50 mA

−

500

−

toff

turn-off time

−

900

−

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