BT136F datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Triacs

BT136F series

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT136F-

...

...F

...G

D/dt

Critical rate of rise of

DM = 67% VDRM(max)V;

100

200

250

µs

off-state voltage

j = 125 ˚C; exponential

waveform; gate open

circuit

com/dt

Critical rate of change of

DM = 400 V; Tj = 95 ˚C;

µs

commutating voltage

T(RMS) = 4 A;

com/dt = 1.8 A/ms; gate

open circuit

Gate controlled turn-on

TM = 6 A; VD = VDRM(max);-

µs

time

G = 0.1 A; dIG/dt = 5 A/µs

Fig.1. Maximum on-state dissipation, P

tot, versus rms

on-state current, I

T(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM, versus pulse width tp, for

sinusoidal currents, t

p ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peak

on-state current I

TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current I

T(RMS) ,

versus heatsink temperature T

hs.

2345

= 180

120

BT136

IT(RMS) / A

Ptot / W

Ths(max) / C

125

119.5

114

108.5

103

97.5

86.5

100

1000

BT136

Number of cycles at 50Hz

ITSM / A

ITSM

time

Tj initial = 125 C max

10us

100us

1ms

10ms

100ms

100

1000

BT136

T / s

ITSM / A

ITSM

time

Tj initial = 125 C max

dI /dt limit

T2- G+ quadrant

-50

100

150

BT136X

92 C

Ths / C

IT(RMS) / A

February 1996

Rev 1.100

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