BC818 datasheet(1/4 Pages) DGNJDZ

Part #	BC818

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.5

A

PC

Collector Power Dissipation

0.3

W

TJ,Tstg

Operation Junction and

Storage Temperature Range

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 10μA, IE=0

30

V

Collector-emitter breakdown voltage

VCEO

IC= 10mA, IB=0

25

V

Emitter-base breakdown voltage

VEBO

IE= 10μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 25 V , IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 4V, IC=0

0.1

μA

hFE(1)

VCE= 1V, IC= 100mA

100

630

DC current gain

hFE(2)

VCE= 1V, IC= 300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB= 50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500mA, IB= 50mA

1.2

V

Base-emitter voltage

VBE

VCE=1V, IC= 500mA

1.2

V

Collecter capactiance

Cob

VCB=10V ,f=1MHz

6

pF

Transition frequency

fT

VCE= 5 V, IC= 50mA

f=100MHz

170

MHz

CLASSIFICATION OF h

FE

(1)

Rank

BC818-16

BC818-25

BC818-40

Range

100-250

160-400

250-630

Marking

6E

6F

6G

1. BASE

2. EMITTER

3. COLLECTOR

BC818

TRANSISTOR (NPN)

SOT-23

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/4

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