BU2515AX datasheet(4/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2515AX

Fig.9. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); IC = 4.5 A; Tj = 85˚C; f = 56 kHz

Fig.10. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Tmb)

Fig.11. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

Fig.12. Test Circuit RBSOA. V

CC = 150 V;

-V

BB = 1 - 5 V;

C = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;

FB = 0.5 - 8 nF; IB(end) = 0.65 - 1.3 A

Fig.13. Reverse bias safe operating area. T

j ≤ Tjmax

Fig.14. I

Csat during normal running vs. frequency of

operation for optimum performance

0.5

1.5

ts/tf / us

BU2515AF/DF/AX/DX

IB / A

IBend

-VBB

T.U.T.

VCC

VCL

CFB

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

100

1000

VCE / V

IC / A

BU2515

Area where

fails occur

1500

10203040

506070

BU2515AF/AX

frequency (kHz)

Ic(sat) (A)

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

D = 0

0.02

0.05

0.1

0.2

0.5

D =

0.1

0.01

0.001

September 1997

Rev 1.100

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