Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2515AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

1.0

mA

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

5.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.0

V

h

FE

DC current gain

I

-

17.2

-

h

FE

I

5

8.2

10.8

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (56 kHz line

I

deflection circuit)

I

-V

t

s

Turn-off storage time

2.2

3.0

µs

t

f

Turn-off fall time

0.2

0.4

µs

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

IC

IB

VCE

ICsat

IBend

18us

8.8us

t

t

t

TRANSISTOR

DIODE

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

t

- IBM

2 Measured with half sine-wave voltage (curve tracer).

September 1997

2

Rev 1.100