BU2522DF datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DF

Fig.7. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.8. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.9. Typical collector-emitter saturation voltage.

CEsat = f (IB); parameter IC

Fig.10. Typical turn-off losses. T

j = 85˚C

Poff = f (I

B); parameter IC; f = 64 kHz

Fig.11. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz

Fig.12. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Ths)

0.1

IC / A

VCESAT / V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

100

Tj = 25 C

Tj = 125 C

IC/IB =

0.2

0.4 0.6

0.8

1.2 1.4

1.6

1.8

IB / A

Poff / W

BU2522AF

100

IC =

IB / A

VBESAT / V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

Tj = 25 C

Tj = 125 C

IC=

8 A

6 A

5 A

4 A

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

IB / A

ts, tf / us

BU2522AF

3.5

2.5

1.5

0.5

IC =

0.1

IB / A

VCESAT / V

0.1

Tj = 25 C

Tj = 125 C

IC = 4 A

5 A

6 A

8 A

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

September 1997

Rev 1.200

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