Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DF

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic

full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved

RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

5.0

V

I

Csat

Collector saturation current

f = 64 kHz

6

-

A

V

F

Diode forward voltage

I

-

2.2

V

t

f

Fall time

I

0.12

0.25

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

I

B

Base current (DC)

-

6

A

I

BM

Base current peak value

-

9

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

150

mA

-I

BM

Reverse base current peak value

1

-6

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

12

3

case

b

c

e

Rbe

1 Turn-off current.

September 1997

1

Rev 1.200