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MIC4606 Datasheet(PDF) 20 Page - Microchip Technology

Part # MIC4606
Description  85V Full-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection
PDF  40 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC4606 Datasheet(HTML) 20 Page - Microchip Technology

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MIC4606
DS20005604D-page 20
 2017-2019 Microchip Technology Inc.
The bootstrap circuit consists of an internal diode and
external capacitor, CB. In a typical application, such as
the motor driver shown in Figure 6-3 (only Phase A is
illustrated), the AHS pin is at ground potential while the
low-side MOSFET is on. The internal diode allows
capacitor CB to charge up to VDD – VF during this time
(where VF is the forward voltage drop of the internal
diode). After the low-side MOSFET is turned off and the
AHO pin turns on, the voltage across capacitor CB is
applied to the gate of the high-side external MOSFET.
As the high-side MOSFET turns on, voltage on the
AHS pin rises with the source of the high-side MOSFET
until it reaches VIN. As the AHS and AHB pins rise, the
internal diode is reverse biased, preventing capacitor
CB from discharging.
FIGURE 6-3:
MIC4606 Motor Driver Example.
6.6
Programmable Gate Drive
The MIC4606 offers programmable gate drive, which
means the MOSFET gate drive (gate-to-source voltage)
equals the VDD voltage. This feature offers designers
flexibility in driving the MOSFETs. Different MOSFETs
require different VGS characteristics for optimum
RDS(ON) performance. Typically, the higher the gate volt-
age (up to 16V), the lower the RDS(ON) achieved. For
example, a NTMSF4899NF MOSFET can be driven to
the ON state with a gate voltage of 5.5V, but RDS(ON) is
5.2 mΩ. If driven to 10V, RDS(ON) is 4.1 mΩ – a decrease
of 20%. In low-current applications, the losses due to
RDS(ON) are minimal, but in battery-powered high-
current motor drive applications, such as power tools,
the difference in RDS(ON) can cut into the efficiency
budget, reducing run time.
FIGURE 6-4:
MOSFET RDS(ON) vs. VGS.
AHS
AHB
AHO
V
DD
CB
ALO
LEVEL
SHIFT
AHI
ALI
V
SS
V
IN
PHASE
B
CVDD
Q1
Q2
PHASE A
MIC4606
M
PHASE
A
I
D = 30A
T
J = 25°C
1.1E-02
1E-02
9E-03
8E-03
7E-03
6E-03
5E-03
4E-03
3E-03
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS, GATE-TO-SOURCE VOLTAGE (V)



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