BSP110 datasheet(6/14 Pages) NEXPERIA

6 / 14 page

Philips Semiconductors

BSP110

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 03 — 26 July 2000

5 of 13

9397 750 07256

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID =10 µA; VGS =0V

Tj =25 °C

100

130

−

Tj = −55 °C89

−−

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C1

−

Tj = 150 °C

0.6

−−

Tj = −55 °C

−−

3.5

IDSS

drain-source leakage current

VDS = 60 V; VGS =0V

Tj =25 °C

−

0.01

1.0

µA

Tj = 150 °C

−−

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0V

−

100

RDSon

drain-source on-state

resistance

VGS =5V; ID = 150 mA;

Figure 7 and 8

Tj =25 °C

−

510

Ω

Tj = 150 °C

−−

Ω

Dynamic characteristics

gfs

forward transconductance

VDS =5V; ID = 175 mA;

Figure 11

−

350

−

Ciss

input capacitance

VGS =0V; VDS =10V;

f = 1 MHz; Figure 12

−

Coss

output capacitance

−

8.5

Crss

reverse transfer capacitance

−

510

ton

turn-on time

VDD = 50 V; RD = 250 Ω;

VGS =10V; RG =50 Ω;

RGS =50 Ω

−

310

toff

turn-off time

−

Source-drain diode

VSD

source-drain (diode forward)

voltage

IS = 300 mA; VGS =0V;

Figure 13

−

0.95

1.5

trr

reverse recovery time

IS = 300 mA;

dIS/dt = −100 A/µs;

VGS =0V; VDS =25V

−

recovered charge

−

BSP110 Datasheet(PDF) 6 Page - Nexperia B.V. All rights reserved

BSP110 Datasheet(HTML) 6 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL