BU2725DF datasheet(4/7 Pages) PHILIPS

Part #	BU2725DF

Description	Silicon Diffused Power Transistor

PDF	7 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DF

Fig.5. DC current gain. h

FE = f (IC)

Parameter T

(Low and high gain)

Fig.6. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.7. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.8. Limit storage and fall time.

s = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz

BU2727D/DF

0.01

0.1

100

hFE

IC / A

VCE = 1 V

Ths = 25 C

Ths = 85 C

234

0.6

0.7

0.8

0.9

VBEsat / V

BU2727D/DF

IB / A

IC = 6 A

4 A

Ths = 85 C

Ths = 25 C

0.1

100

0.01

0.1

BU2727D/DF

VCEsat / V

Ths = 85 C

Ths = 25 C

IC/IB = 12

IC/IB = 5

IC / A

0123

IB / A

ts/tf/ us

BU2527AFX,DFX

September 1997

Rev 1.100

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