Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DF

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

110

-

mA

B

VEBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

R

EB

Base-emitter resistance

V

70

Ω

V

CEsat

Collector-emitter saturation voltage

I

-

-

1.0

V

V

BEsat

Base-emitter saturation voltage

I

0.78

0.86

0.95

V

V

F

Diode forward voltage

I

1.4

2.2

V

h

FE

DC current gain

I

-

19

-

h

FE

I

3.8

5.8

7.8

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (16 kHz line

I

deflection circuit)

V

-V

t

s

Turn-off storage time

1.5

2

µs

t

f

Turn-off fall time

0.14

0.3

µs

2 Measured with half sine-wave voltage (curve tracer).

September 1997

2

Rev 1.100