Absolute Maximum Ratings T

A = 25°C unless otherwise stated

Rev 1.0

12/07/23

NPN Transistor Bare Die, 2N6045

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

8

A

Base Current

IB

120

mA

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55 to 150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 100mA

100

-

-

V

Collector-Emitter Breakdown Voltage

VCEO(SUS)

IC = 30mA, IB = 0

100

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 100µA

5

-

-

V

ICBO

VCB = 100V, IE = 0

-

-

500

µA

Collector Cut-off Current

ICEO

VCE = 50V, IB = 0

-

-

500

µA

Emitter Cut-off Current

IEBO

VEB = 5V, IC = 0

-

-

2

mA

ON CHARACTERISTICS

IC = 3A, VCE = 4V

1000

-

20000

-

DC Current Gain

hFE

IC = 8A, VCE = 4V

100

-

-

-

IC = 3A, IB = 12mA

-

-

2

V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 8A, IB = 80mA

-

-

4

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 8A, IB = 80mA

-

-

4.5

V

Base-Emitter On Voltage

VBE(ON)

IC = 4A, VCE = 4V

-

-

2.8

V

SMALL-SIGNAL CHARACTERISTICS

1

Small-Signal Current Gain

ǀhfeǀ

VCE = 4V, IC = 3A, f = 1 MHz

4

-

-

-

Output Capacitance

Cobo

VCB = 10V, IE = 1A, f = 0.1 MHz

-

-

300

pF

Small-Signal Current Gain

hfe

VCE = 4V, IC = 3A, f = 1 KHz

300

-

-

-

Electrical Characteristics T

A = 25°C unless otherwise stated

1. Not production testing in die form, characterized by chip design and tested in package.

Internal NPN Schematic Diagram

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