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C1226 Datasheet(PDF) 2 Page - IMP, Inc |
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C1226 Datasheet(HTML) 2 Page - IMP, Inc |
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2 / 2 page ![]() 70 C1226-11-01 Min Channel Width 4.0 µm Diffusion Overlap of Contact 1.0 µm Min Spacing, Active Region, 5V 2.0 µm Poly Overlap of Contact 1.0 µm Poly1 Width/Space 1.5/2.0 µm Contact to Poly Space 1.5 µm Poly2 Width/Space 3.0/2.0 µm Metal-1 Overlap of Contact 1.0 µm Contact Width/Space 1.5/1.5 µm Minimum Pad Opening 65x65 µm Via Width/Space 1.5/1.5 µm Minimum Pad to Pad Spacing 5.0 µm Metal-1 Width/Space 2.5/1.5 µm Minimum Pad Pitch 80 µm Metal-2 Width/Space 2.5/1.5 µm Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Starting Material p<100> Well (field) Sheet Resistance ρ N-well(f) 1.0 1.7 2.4 K Ω/ n-well N+ Sheet Resistance ρ N+ 20 35 50 Ω/ N+ Junction Depth xjN+ 0.3 µm P+ Sheet Resistance ρ P+ 60 110 150 Ω/ P+ Junction Depth xjP+ 0.3 µm High-Voltage Gate Oxide Th HTGOX 24 nm Gate Oxide Thickness TGOX 24 nm Interpoly Oxide IPOX 33.6 42.0 50.4 nm Gate Poly Sheet Resistance ρ POLY1 30.0 Ω/ Metal-1 Sheet Resistance ρ M1 45 m Ω/ Metal-2 Sheet Resistance ρ M2 29 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. High Voltage Section Rules Layout Rules Physical Characteristics Process C1226 |
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