C1226 datasheet(1/2 Pages) IMP

Part #	C1226

Description	CMOS 1.2um 100V CMOS, Double Metal - Double Poly

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Manufacturer	IMP [IMP, Inc]

Direct Link	http://www.ds-imp.com.cn/index.asp

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1 / 2 page

69

Process C1226

CMOS 1.2

µm

100V CMOS, Double Metal - Double Poly

Electrical Characteristics

T = 25oC Unless otherwise noted

ISO 9001 Registered

®

Symbol

Minimum

Typical

Maximum

Unit

Comments

N-Channel High Voltage Transistor

Threshold Voltage

HVTN

0.70

0.90

1.10

V

Punch Through Voltage

HVBVDSSN

120

V

ON Resistance

HVPR0N

550

700

850

Ω

W/L = 147/5

Operating Voltage

VGS = 5V

VDS = 100V

N-Channel Low Voltage Transistor

Threshold Voltage

VTN

0.30

0.45

0.65

V

100x1.5

µm

Body Factor

γN

0.475

V1/2

100x1.5

µm

Conduction Factor

βN

64

78

92

µA/V2

100x100

µm

Effective Channel Length

LeffN

1.35

µm

100x1.5

µm

Width Encroachment

∆WN

0.4

µm

Per side

Punch Through Voltage

BVDSSN

512

V

Poly Field Threshold Voltage

VTFPN

815

V

Symbol

Minimum

Typical

Maximum

Unit

Comments

P-Channel High Voltage Transistor

Threshold Voltage

HVTP

–0.70

–0.90

–1.10

V

Punch Through Voltage

HVBVDSSP

–120

V

ON Resistance

HVPR0N

2000

2500

3000

Ω

W/L = 139/5

Operating Voltage

VGS = 5V

VDS = 100V

V

P-Channel Low Voltage Transistor

Threshold Voltage

VTP

-0.65

–0.45

–0.30

V

100x1.5

µm

Body Factor

γ P

0.6

V1/2

100x1.5

µm

Conduction Factor

β P

20

25

30

µA/V2

100x100

µm

Effective Channel Length

LeffP

1.5

µm

100x1.5

µm

Width Encroachment

∆WP

0.4

µm

Per side

Punch Through Voltage

BVDSSP

–5

–12

V

Poly Field Threshold Voltage

VTFP(P)

–8

–12

V

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