Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100AT

Fig.7. Collector-Emitter saturation voltage.

Fig.8. Base-Emitter saturation voltage.

Solid Lines = typ values, I

Solid Lines = typ values, I

INDUCTIVE SWITCHING

Fig.9. Test circuit inductive load.

Fig.10. Switching times waveforms with inductive load.

V

Fig.11. Inductive switching.

Fig.12. Inductive switching.

tfi = f(h

tfi = f(I

0.01

0.1

1

2

0

0.5

1

1.5

2

IC, COLLECTOR CURRENT/A

VCEsat VOLTAGE/V

IC/IB = 3

25 C

-40 C

125 C

0.01

0.1

1

2

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

IC, COLLECTOR CURRENT/A

VBEsat VOLTAGE/V

IC/IB = 3

25 C

125 C

-40 C

LB

IBon

-VBB

LC

T.U.T.

VCC

IC

IB

ICon

IBon

-IBoff

t

t

ts

tf

toff

10 %

90 %

246

8

10

0

25

50

75

100

125

150

175

200

225

250

275

HFE GAIN (IC/IB)

tfi (ns)

11

IC = 2A

IC = 1A

IC = 1.5A

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0

25

50

75

100

125

150

175

200

225

250

275

IC COLLECTOR CURRENT /A

tfi (ns)

IC/IB = 10

IC/IB = 5

IC/IB =3

September 1999

4

Rev 1.000