Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100AT

Fig.13. Inductive switching.

Fig.14. Inductive switching.

tsi = f(h

tsi = f(I

RESISTIVE SWITCHING

Fig.15. Test circuit resistive load. V

Fig.16. Switching times waveforms with resistive load.

V

R

Fig.17. Resistive switching.

Fig.18. Resistive switching.

ton = f(I

ts = f(I

2468

10

0

0.25

0.5

0.75

1

1.25

HFE GAIN (IC/IB)

tsi (us)

11

IC = 2A

IC = 1A

IC = 1.5A

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0

0.25

0.5

0.75

1

1.25

IC COLLECTOR CURRENT /A

tsi (us)

IC/IB = 10

IC/IB = 5

IC/IB = 3

tp

T

VCC

R

R

T.U.T.

0

VIM

B

L

IC

IB

10 %

10 %

90 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

0

0.5

1

1.5

2

0

0.5

1

1.5

2

IC COLLECTOR CURRENT (A)

ton (us)

IC/IB = 3

IC/IB = 5

IC/IB = 10

0

0.5

1

1.5

2

2.5

0

0.5

1

1.5

2

2.5

3

IC COLLECTOR CURRENT (A)

ts (us)

IC/IB = 3

IC/IB = 10

IC/IB = 5

September 1999

5

Rev 1.000