BUJ105AX datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ105AX

Fig.7. Normalised power dissipation.

PD% = 100

⋅PD/PD

25˚C = f (Ths)

Fig.8. Typical DC current gain. h

FE = f(IC)

parameter V

Fig.9. Typical DC current gain. h

FE = f(IC)

parameter V

Fig.10. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IB); Tj=25˚C.

Fig.11. Base-Emitter saturation voltage.

Solid lines = typ values, V

BEsat = f(IC); at IC/IB =4.

Fig.12. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IC); at IC/IB =4.

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

0.0

0.4

0.8

1.2

1.6

2.0

0.01

0.10

1.00

10.00

IB/A

VCEsat/V

IC=1A

0.01

0.05

0.1

0.3

IC/A

HFE

Tj=100C

25C

-40C

VCE=1V

0.1

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

IC/A

VBESAT/V

Tj=100C

-40C

25C

0.01

0.05

0.1

0.3

IC/A

HFE

Tj=100C

25C

-40C

VCE=5V

0.2

0.4

0.6

0.1

0.2

0.3

0.4

0.5

0.6

IC/A

VCESAT/V

Tj=100C

-40C

25C

February 1999

Rev 1.000

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