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UPD17062 Datasheet(PDF) 289 Page - Renesas Technology Corp

Part # UPD17062
Description  MOS INTEGRATED CIRCUIT
PDF  298 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD17062 Datasheet(HTML) 289 Page - Renesas Technology Corp

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287
µPD17062
24. ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (Ta = 25
±2 °C)
Parameter
Symbol
Rated value
Unit
Supply voltage
VDD
–0.3 to +6.0
V
Input voltage
VI
–0.3 to VDD + 0.3
V
Output voltage
VO
–0.3 to VDD + 0.3 (excluding P1A3 to P1A0 and PWM3 to PMW0)
V
Output absorption current
IO
10 (excluding P1A)
mA
Output withstand voltage
VBDS
13 (P1A, PWM)
V
Operating temperature
Topt1
–20 to +70
°C
Topt2
–40 to +85 (when IDC has stopped)
Storage temperature
Vstg
–55 to +125
°C
RECOMMENDED OPERATION RANGE (Ta = –40 to +85
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Supply voltage
VDD1
Ta = –20 to +70
°C (when CPU, PLL, and IDC are operating)
4.5
5.0
5.5
V
VDD2
When CPU and PLL are operating (IDC is not operating)
4.5
5.0
5.5
V
VDD3
When only CPU is operating (PLL and IDC are not operating)
4.0
5.0
5.5
V
Data hold voltage
VDDR
When crystal oscillation has stopped
3.0
5.5
V
Output withstand voltage
VBDS
P1B3-P1B1
0.0
12.5
V
Input amplitude
Vin1
VCO
0.7
VDD
VP-P
Supply voltage rise time
trise
VDD : 0
→ 4.0 V
500
ms



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