BUJ303AX datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Preliminary specification

Silicon Diffused Power Transistor

BUJ303AX

Fig.7. Normalised power dissipation.

PD% = 100

⋅PD/PD

25˚C = f (Ths)

Fig.8. Typical DC current gain. h

FE = f(IC)

parameter V

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IB); Tj=25˚C.

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V

BEsat = f(IC); at IC/IB =4.

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IC); at IC/IB =4.

Fig.12. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

100

120

140

Ths / C

Normalised Derating

120

110

100

with heatsink compound

P tot

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1.0

10.0

IC/A

VBEsat/V

0.01

100

0.1

h FE

IC / A

Tj = 25 C

0.0

0.1

0.2

0.3

0.4

0.5

IC/A

VCEsat/V

0.0

0.4

0.8

1.2

1.6

2.0

0.01

0.10

1.00

10.00

IB/A

VCEsat/V

IC=1A

100u

10m

100

t / s

Zth / (K/W)

0.1

0.01

0.001

D=0

0.5

0.2

0.1

0.05

0.02

10u

100m

D =

BU1706AX

August 1998

Rev 1.000

BUJ303AX Datasheet(PDF) 4 Page - NXP Semiconductors

BUJ303AX Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL