BUJ303AX datasheet(5/7 Pages) PHILIPS

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Philips Semiconductors

Preliminary specification

Silicon Diffused Power Transistor

BUJ303AX

Fig.13. Reverse bias safe operating area. T

j ≤ Tj max

Fig.14. Test circuit for reverse bias

safe operating area.

cl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH;

c = 200µH

Fig.15. Forward bias safe operating area. T

hs ≤ 25 ˚C

(1)

tot max and Ptot peak max lines.

(2)

Second breakdown limits.

Region of permissible DC operation.

Extension for repetitive pulse operation.

III

Extension during turn-on in single

transistor converters provided that

BE ≤ 100 Ω and tp ≤ 0.6 µs.

NB:

Mounted with heatsink compound and

± 5 newton force on the centre of the

envelope.

200

400

600

800

1,000

1,200

VCE CLAMP/V

IC/V

100

1000

100

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

IC / A

/ V

ICM max

IC max

= 0.01

III

500 ms

(1)

(2)

IBon

-VBB

T.U.T.

VCC

VCL

August 1998

Rev 1.000

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