SI7452DP datasheet(2/3 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si7452DP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

3.7

On-State Drain Current

ID(on)

VDS ≥ 5 V, VGS = 10 V

651

Drain-Source On-State Resistance

rDS(on)

VGS = 10 V, ID = 19.3 A

0.0063

0.007

Ω

Forward Transconductance

gfs

VDS = 15 V, ID = 19.3 A

Forward Voltage

VSD

IS = 4.5 A, VGS = 0 V

0.84

0.80

Dynamic

Total Gate Charge

112

105

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 30 V, VGS = 10 V, ID = 19.3 A

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD = 30 V, RL = 30 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 72989

S-60145

Rev. B, 13-Feb-06

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