Technical Data

Data Sheet N1724, Rev. A

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

BAT54T(AT)(CT)(ST)

BAT54T/AT/CT/ST SCHOTTKY BARRIER DIODE

BAT54T

BAT54AT

BAT54CT

BAT54ST

MARKING:L1

MARKING:L2

MARKING:L3

MARKING:L4

Solid dot = Green molding compound device, if none, the normal device.

Symbol

Parameter

Value

Units

VRRM

Peak Repetitive Reverse Voltage

30

V

VRWM

Working Peak Reverse Voltage

VR(RMS)

RMS Reverse Voltage

21

V

IO

Average Rectified Output Current

0.2

A

IFSM

Non-repetitive Peak Forward Surge Current @ t=8.3ms

600

mA

IFRM

Repetitive Peak Forward Surge Current

@ t≤1s;δ≤0.5

300

mA

PD

Power Dissipation

150

mW

RΘJA

Thermal Resistance from Junction to Ambient

667

°C/W

Tj

Junction Temperature

125

°C

Tstg

Storage Temperature

-55~+150

°C

Features

Maximum Ratings@TA=25°C unless otherwise specified



Low Forward Voltage Drop



Fast Switching



PN Junction Guard Ring for Transient and

ESD Protection



This is a Pb − Free Device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon request

SOT-523