1.

Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

2.

Pinning information

PMT29EN

30 V, 6 A N-channel Trench MOSFET

Rev. 1 — 31 August 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

--30

V

VGS

gate-source voltage

-20

-

20

V

ID

drain current

VGS =10V; Tamb =25°C

[1]

--6

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10V; ID =6A; Tj = 25 °C

-

24

29

m

Ω

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT223 (SC-73)

2

D

drain

3S

source

4

D

drain

13

2

4

S

D

G

017aaa253