STV160NF03LA datasheet(3/8 Pages) STMICROELECTRONICS

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STV160NF03LA

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 15 V, ID = 80 A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

Rise Time

380

Total Gate Charge

VDD = 24 V, ID = 160 A,

VGS = 10 V

123

160

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off-Delay Time

Fall Time

VDD = 15 V, ID = 80 A,

RG =4.7Ω, VGS = 10 V

(see test circuit, Figure 5)

100

150

td(off)

tr(Voff)

Turn-off Delay Time

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 24 V, ID = 40 A

RG =4.7Ω, VGS = 10V

110

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

160

ISDM (1)

Source-drain Current (pulsed)

640

VSD (2)

Forward On Voltage

ISD = 160 A, VGS = 0

1.5

trr

Reverse Recovery Time

ISD = 160A, di/dt = 100A/µs,

VDD = 15V, Tj = 25°C

(see test circuit, Figure 5)

Qrr

Reverse Recovery Charge

180

IRRM

Reverse Recovery Current

4.5

Safe Operating Area

Thermal Impedance

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