© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 6

1

Publication Order Number:

2N3055/D

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon

Power Transistors

Complementary silicon power transistors are designed for

general−purpose switching and amplifier applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

60

Vdc

Collector−Emitter Voltage

70

Vdc

Collector−Base Voltage

100

Vdc

Emitter−Base Voltage

7

Vdc

Collector Current − Continuous

15

Adc

Base Current

7

Adc

Derate Above 25

°C

115

0.657

W

W/

°C

Operating and Storage Junction

Temperature Range

− 65 to +200

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

160

0

0

25

50

75

100

125

150

175

200

Figure 1. Power Derating

140

120

100

80

60

40

20

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 115 WATTS

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

2N3055

TO−204AA

100 Units / Tray

MJ2955G

TO−204AA

(Pb−Free)

TO−204AA (TO−3)

CASE 1−07

STYLE 1

100 Units / Tray

2N3055G

TO−204AA

(Pb−Free)

100 Units / Tray

MJ2955

TO−204AA

100 Units / Tray

MARKING DIAGRAM

xxxx55

= Device Code

xxxx = 2N30 or MJ20

G

= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

xxxx55G

AYYWW

MEX