MJ2955G. datasheet(2/4 Pages) ONSEMI

2 / 4 page

2N3055(NPN), MJ2955(PNP)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.52

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS*

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0)

VCEO(sus)

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)

VCER(sus)

−

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ICEO

−

0.7

mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ICEX

−

1.0

5.0

mAdc

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

IEBO

−

5.0

mAdc

ON CHARACTERISTICS* (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

5.0

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

−

1.1

3.0

Vdc

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.5

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

Is/b

2.87

−

Adc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

2.5

−

MHz

*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

120

−

*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

fhfe

−

kHz

*Indicates Within JEDEC Registration. (2N3055)

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 2. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.6

0.4

0.2

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT

THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature according to Figure 1.

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